Shanghai Jinquan Electronic Technology Co., Ltd.
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  • Contact Person : Mr. Chow Spring
  • Company Name : Shanghai Jinquan Electronic Technology Co., Ltd.
  • Tel : 86-21-51871313-8025
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50N06 N-Channel Metal Oxide Semiconductor Field Effect Transistor

50N06 N-Channel Metal Oxide Semiconductor Field Effect Transistor
Product Detailed
CSP50N06,Field Effect Transistor 1,VDSS:60V 2,RDS(ON) ):18 mili-ohm 3,Id:50 A; Package:TO-220 4,Certification:RoHS Compliant

5,FEATURES :* RDS(ON) = 23m@VGS = 10 V* Ultra low gate charge ( typical 30 nC )* Low reverse transfer capacitance ( CRSS = typical 80 pF )* Fast switching capability* 100% avalanche energy specified* Improved dv/dt capability

6,SYMBOL :

CSU50N06 TO-251 PackageCSP50N06 TO-220 PackageCSD50N06 TO-252 Package

7,APPLICATION :Networking DC-DC Power SystemAuotmobile Convert SystemPower Supply,Auto Device etc..

8,DESCRIPTION:The CSI 50N06 is three-terminal silicon device with currentconduction capability of about 50A, fast switching speed. Lowon-state resistance, breakdown voltage rating of 60V, and maxthreshold voltages of 4 volt.It is mainly suitable electronic ballast, and low power switchingmode power appliances.

CSP50N06, N-Channel Metal Oxide Semiconductor Field Effect Transistor:

Product Name

MOSFET;Mental Oxiode Semiconductor Field Effector Transistor

Series

N-Channel Power MOSFET-600 Volts Series

Package Type

        TO-220

Certificate

ISO9001:2008 Certificate;SGS Report;RoHS Compliant.

Delivery Time

Within 2-4 Weeks After Order Confirmed.

Cooperation Customers

NFA,BYD,Hyundai and Panda etc..

Performance

Specification Parameters As Follows:

Part 

Number

PD

ID

V(BR)DSS

RDS(ON)

VGS

EAS

PIN-ARRAY

Package

W

A

V

Ω

V

J

CSP5N60

100

4.5

600

2.2

±30

216

GDS

TO-220

CSP6N60

115

5.6

600

1.35

±30

385

GDS

TO-220

CSP8N60

140

8

600

1

±30

560

GDS

TO-220

CSP10N60

158

9.9

600

0.75

±30

760

GDS

TO-220

CSP12N60

180

11.5

600

0.73

±30

830

GDS

TO-220

CSP50N06

130

50

60

0.023

±25

727

GDS

TO-220

CSP75N80M

268

80

75

0.009

±25

700

GDS

TO-220

NOTE

 

50N06 N-Channel Metal Oxide Semiconductor Field Effect Transistor



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